| PART |
Description |
Maker |
| KSC5027RTU |
3 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220 TO-220, 3 PIN
|
Fairchild Semiconductor, Corp.
|
| SGP10N60RUFTU |
16 A, 600 V, N-CHANNEL IGBT, TO-220 TO-220, 3 PIN
|
Fairchild Semiconductor, Corp.
|
| B82471-A1333-M B82471-A1683-K B82471-A1224-K B8247 |
Rated inductance 10 uH .. 220 uH 额定电感10 uH. 220 uH
|
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
|
| IT124G IT84C IT82B IT102G IT120F IT124F IT100F IT8 |
TRIAC|400V V(DRM)|12A I(T)RMS|TO-220
TRIAC|200V V(DRM)|10A I(T)RMS|TO-220
TRIAC|50V V(DRM)|12A I(T)RMS|TO-220
TRIAC|50V V(DRM)|10A I(T)RMS|TO-220
TRIAC|400V V(DRM)|8A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 8A条口（T）的有效值|20
TRIAC|200V V(DRM)|8A I(T)RMS|TO-220 可控硅| 200伏五（DRM）的| 8A条口（T）的有效值|20
TRIAC|50V V(DRM)|8A I(T)RMS|TO-220 可控硅| 50V五（DRM）的| 8A条口T）的有效值|20
TRIAC|100V V(DRM)|12A I(T)RMS|TO-220 可控硅| 100V的五（DRM）的| 12A条口（T）的有效值|20
TRIAC|600V V(DRM)|10A I(T)RMS|TO-220 可控硅| 600V的五（DRM）的| 10A条口（T）的有效值|220
TRIAC|600V V(DRM)|8A I(T)RMS|TO-220 可控硅| 600V的五（DRM）的| 8A条口（T）的有效值|20
TRIAC|400V V(DRM)|8A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 8A条口（T）的有效值|220
TRIAC|50V V(DRM)|8A I(T)RMS|TO-220 可控硅| 50V五（DRM）的| 8A条口（T）的有效值|20
|
STMicroelectronics N.V.
Electronic Theatre Controls, Inc.
Sullins Connector Solutions, Inc.
Sanyo Electric Co., Ltd.
KEC Holdings
Aavid Thermalloy, LLC
Cornell Dubilier Electronics, Inc.
|
| BCR8UM BCR8UM-12 |
600 V, 8 A, TRIAC, TO-220 TO-220, 3 PIN
MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE 中功率使用绝缘型，玻璃钝化型
|
Central Semiconductor, Corp.
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| IRF634 IRF634FP |
N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAYMOSFET N沟道250V - 0.38ohm - 8A条TO-220/TO-220FP⑩MOSFET的网格密
N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY⑩ MOSFET
N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY MOSFET
N-CHANNEL 250V 0.38 OHM 8A TO-220/TO-220FP MESH OVERLAY MOSFET
|
TE Connectivity, Ltd.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| APT30DQ60KG |
Fast Recovery Epitaxial Diode; Package: TO-220 [K]; IO (A): 30; VR (V): 600; trr (nsec): 19; VF (V): 2; Qrr (nC): 400; 30 A, 600 V, SILICON, RECTIFIER DIODE, TO-220
|
Microsemi, Corp.
|
| STP190N55LF3 |
N-channel 55 V, 2.9 miliohm, 120 A, TO-220
N-channel 55 V, 2.9 mOhm typ., 120 A STripFET(TM) Power MOSFET in a TO-220 package
|
STMicroelectronics
ST Microelectronics
|
| KSB707OJ69Z KSB708OJ69Z |
7 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220 TO-220, 3 PIN
7 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220 TO-220, 3 PIN
|
Fairchild Semiconductor, Corp.
|
|
